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CMF20120D- Silicon Carbide Power MOSFET
Z -F ET TM M OSFET
N-Channel Enhancement Mode
Features
Package
? 
High Speed Switching with Low Capacitances
? 
High Blocking Voltage with Low R DS(on)
? 
Easy to Parallel and Simple to Drive
? 
Avalanche Ruggedness
? 
Resistant to Latch-Up
? 
Halogen Free, RoHS Compliant
TO-247-3
Benefits
? 
Higher System Efficiency
? 
Reduced Cooling Requirements
? 
Increased System Switching Frequency
Applications
V DS
I D(MAX)
R DS(on)
1200 V
42 A
80m ?
? 
? 
? 
? 
? 
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
CMF20120D
Package
TO-247-3
Maximum Ratings (T C  = 25?C unless otherwise specified)
Symbol
I D
I Dpulse
E AS
E AR
I AR
V GS
P tot
T J , T stg
T L
M d
Parameter
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Gate Source Voltage
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
Value
42
24
90
2.2
1.5
20
-5/+25
215
-55 to
+135
260
1
8.8
Unit
A
A
J
J
A
V
W
?C
?C
Nm
lbf-in
Test Conditions
V GS @20V, T C = 25?C
V GS @20V, T C = 100?C
Pulse width t P limited by T jmax
T C = 25?C
I D = 20A, V DD = 50 V,
L = 9.5 mH
t AR limited by T jmax
I D = 20A, V DD = 50 V, L = 3 mH
t AR limited by T jmax
T C =25?C
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Note
Fig. 10
Fig. 15
Fig. 9
1
CMF20120D Rev. D
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